WebSreenivasan Raghavasimhan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO). WebSugawara T, Sreenivasan R, Oshima Y, et al. (2007) Influences of Plasma Processed Interface Layers on Germanium MOS Devices with ALD Grown HfO2 Mrs Proceedings. …
ALD resist formed by vapor-deposited self-assembled monolayers
Web1 de feb. de 2012 · All deposition steps were carried out in a 300 mm standard industrial Rapid Thermal Chemical Vapor Deposition reactor, including the low temperature (< 600 °C) cyclic epitaxy process.A Si 2 H 6-based gas mix for Si deposition was used, combined with SiH 3 CH 3 (MMS) and PH 3 for carbon and phosphorus incorporation, respectively. … WebRaghavasimhan Sreenivasan Yasuhiro Oshima Paul McIntyre Germanium and hafnium-dioxide (HfO2) stack structures' physical and electrical properties were studied based on … fix a scratch in a wood floor
Sreenivasan Raghavasimhan Inventions, Patents and Patent …
WebCynthia N. Ginestra, Raghavasimhan Sreenivasan, Annamalai Karthikeyan, Shriram Ramanathan and Paul C. McIntyre Open abstract View article PDF B166 Gradient … http://gcep.stanford.edu/research/factsheets/metaloxide_nanotubes_update.html Web29 de jul. de 2015 · Raghavasimhan Sankaranarayanan PhD Candidate (Machine Learning and Robotics) Atlanta, Georgia, United States 484 followers 450 connections Join to follow Georgia Institute of Technology Portfolio... fix a scratched led monitor